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| FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench(R) MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. Features * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON) * SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick) Applications * DC/DC converter * Load switch * LCD display inverter S G D D Pin 1 1 2 3 Complementary 6 5 4 G S SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Q1 20 12 (Note 1) Q2 -20 12 -0.6 -2 0.3 -55 to +150 Units V V A W C 0.7 2.1 Power Dissipation for Single Operation (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 C/W Package Marking and Ordering Information Device Marking .32 Device FDG6332C Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2003 Fairchild Semiconductor Corporation FDG6332C Rev C2 (W) FDG6332C Electrical Characteristics Symbol Parameter Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current TA = 25C unless otherwise noted Test Conditions ID = 250 A VGS = 0 V, VGS = 0 V, ID = -250 A ID = 250 A,Ref. to 25C ID = -250 A,Ref. to 25C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12V , VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A,Ref. To 25C ID = -250 A,Ref. to 25C VGS = 4.5 V, ID =0.7 A VGS = 2.5 V, ID =0.6 A VGS = 4.5 V, ID =0.7A,TJ=125C VGS = -4.5 V, ID = -0.6 A VGS = -2.5 V, ID = -0.5 A VGS=-4.5 V, ID =-0.6 A,TJ=125C VDS = 5 V VDS = -5 V VGS = 4.5 V, ID = 0.7 A ID = -0.6A VDS = 5 V Q1 Q2 Q1 Q2 Q1 Q2 Min 20 -20 Typ Max Units V 14 -14 1 -1 100 100 mV/C A nA nA IGSSF /IGSSR Gate-Body Leakage, Forward IGSSF /IGSSR Gate-Body Leakage, Reverse On Characteristics VGS(th) VGS(th) TJ RDS(on) (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 0.6 -0.6 1.1 -1.2 -2.8 3 180 293 247 300 470 400 2.8 1.8 1.5 -1.5 V mV/C 300 400 442 420 630 700 m Q2 gFS ID(on) Forward Transconductance On-State Drain Current Q1 Q2 Q1 Q2 S A 1 -2 VGS = -4.5 V, VDS = -5 V Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=10 V, V GS= 0 V, f=1.0MHz VDS=-10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=-10 V, V GS= 0 V, f=1.0MHz VDS=10 V, V GS= 0 V, f=1.0MHz VDS=-10 V, V GS= 0 V, f=1.0MHz 113 114 34 24 16 9 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 For Q1: VDS =10 V, VGS= 4.5 V, 5 I D= 1 A RGEN = 6 5.5 7 14 9 6 1.5 1.7 1.1 I D= 0.7 A RGEN = 6 I D= -0.6 A RGEN = 6 1.4 0.24 0.3 0.3 0.4 10 11 15 25 18 12 3 3.4 1.5 2 ns ns ns ns nC nC nC For Q2: VDS =-10 V, I D= -1 A VGS= -4.5 V, RGEN = 6 For Q1: VDS =10 V, VGS= 4.5 V, For Q2: VDS =-10 V, VGS= -4.5 V, FDG6332C Rev C2 (W) FDG6332C Electrical Characteristics Symbol IS VSD TA = 25C unless otherwise noted Parameter Test Conditions Q1 Q2 (Note 2) (Note 2) Min Typ Max Units 0.25 -0.25 A V Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Q1 Q2 VGS = 0 V, IS = 0.25 A VGS = 0 V, IS = -0.25 A 0.74 -0.77 1.2 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. RJA = 415C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDG6332C Rev C2 (W) FDG6332C Typical Characteristics: N-Channel 4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V ID, DRAIN CURRENT (A) 3.5V 3 2.5V 3.0V 1.8 1.6 VGS = 2.5V 1.4 3.0V 3.5V 4.0V 1 4.5V 2 1.2 2.0V 1 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 1 2 I D, DRAIN CURRENT (A) 3 4 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =0.7A VGS = 4.5V 1.4 ID =0.4A 0.6 1.2 TA = 125oC 0.4 1 TA = 25oC 0.2 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 2.5 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V I D, DRAIN CURRENT (A) 2 TA = -55 C 25oC 125oC 1 TA = 125oC 25 oC -55 C o 1.5 0.1 1 0.01 0.5 0.001 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C Rev C2 (W) FDG6332C Typical Characteristics: N-Channel 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 0.7A 4 CAPACITANCE (pF) 15V 3 VDS = 5V 10V 200 f = 1MHz VGS = 0 V 150 CISS 100 2 COSS 50 1 CRSS 0 0 0.4 0.8 Qg , GATE CHARGE (nC) 1.2 1.6 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 10 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 8 SINGLE PULSE RJA = 415C/W TA = 25C 1 6 0.1 VGS = 4.5V SINGLE PULSE RJA = 415oC/W TA = 25oC DC 4 2 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDG6332C Rev C2 (W) FDG6332C Typical Characteristics: P-Channel 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -ID, DRAIN CURRENT (A) 1.6 1.8 -3.0V -2.5V VGS = -2.5V 1.6 1.2 1.4 -3.0V 0.8 -2.0V 0.4 1.2 -3.5V -4.0V -4.5V 1 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 0.5 1 -ID, DRAIN CURRENT (A) 1.5 2 Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.2 RDS(ON), ON-RESISTANCE (OHM) 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 o TJ, JUNCTION TEMPERATURE ( C) ID = -0.6A VGS = -4.5V ID = -0.3 A 1 0.8 TA = 125oC 0.6 TA = 25o C 0.4 0.2 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 2 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 1.5 TA = -55 oC 25oC 125 C o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 VGS = 0V 1 TA = 125 C 0.1 25 C 0.01 -55oC o o 1 0.5 0.001 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6332C Rev C2 (W) FDG6332C Typical Characteristics: P-Channel 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.6A 4 CAPACITANCE (pF) 160 VDS = -5V -10V -15V 120 CISS f = 1MHz VGS = 0 V 3 80 COSS 40 2 1 CRSS 0 0 0.3 0.6 0.9 1.2 1.5 1.8 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 10 Figure 18. Capacitance Characteristics. 10 SINGLE PULSE o RJA = 415 C/W TA = 25 C o -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 100s 1ms 8 1 10ms 100ms 1s POWER (W) 100 6 0.1 VGS = -4.5V SINGLE PULSE RJA = 415 oC/W TA = 25oC DC 4 2 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 415 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDG6332C Rev C2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 |
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